advanced power n-channel enhancement mode electronics corp. power mosfet dynamic dv/dt rating bv dss 400v repetitive avalanche rated r ds(on) 1.0 fast switching i d 5.5a simple drive requirement description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value unit rthj-c thermal resistance junction-case max. 1.7 /w rthj-a thermal resistance junction-ambient max. 62 /w data & specifications subject to change without notice AP730P parameter rating 400 5.5 3.5 23 74 linear derating factor 0.59 260 5.5 7 storage temperature range -55 to 150 200219032 -55 to 150 parameter the advanced power mosfets from apec provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial-industrial applications. the device is suited for switch mode power supplies ,dc- ac converters and high current high speed switching circuits. 30 g d s to-220 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 400 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.36 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =2.75a - - 1 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2.75a - 30 - s i dss drain-source leakage current (t j =25 o c) v ds =400v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =320v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 3 i d =5.5a - 35 - nc q gs gate-source charge v ds =320v - 3.7 - nc q gd gate-drain ("miller") charge v gs =10v - 20 - nc t d(on) turn-on delay time 3 v dd =200v - 8 - ns t r rise time i d =5.5a - 20 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 47 - ns t f fall time r d =36 -18- ns c iss input capacitance v gs =0v - 565 - pf c oss output capacitance v ds =25v - 70 - pf c rss reverse transfer capacitance f=1.0mhz - 38 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 5.5 a i sm pulsed source current ( body diode ) 1 --23 a v sd forward on voltage 3 t j =25 , i s =5.5a, v gs =0v - - 1.5 v notes: 1.pulse width limited by safe operating area. 2.starting t j =25 o c , v dd =50v , l=15mh , r g =25 , i as =5.5a. 3.pulse width < 300us , duty cycle < 2%. AP730P 100 30v
AP730P fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c ) normalized bv dss (v) 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =7.0v v g =6.0v v g =5.0v v g =4.0v v g =10v 0 1 2 3 4 02468101214 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =7.0v v g =6.0v v g =5.0v v g =4.0v v g =10v 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =2.75a
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance AP730P 0 1 2 3 4 5 6 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0 20 40 60 80 0 50 100 150 t c , case temperature ( o c ) p d (w) 0 1 10 100 1 10 100 1000 10000 v ds (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
AP730P fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 1.6 2.1 2.6 3.1 3.6 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 1 100 10000 1112131 v ds (v) c (pf) f =1.0mhz ciss coss crss 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j = 25 o c t j = 150 o c 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5.5a v ds =80v v ds =120v v ds =160v
AP730P fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a
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